iWave Systems recently introduced its new PCIe to SD bridge module with an M.2 type 2280 form factor. The module provides greater flexibility when it comes to compatibility and integration with ...
1. Simplified diagram of the LMG5200 GaN FET power stage. The LMG5200 is a complete, reliable power stage, consisting of a performance optimized driver and power GaN FET. All devices are mounted on a ...
The BSM120D12P2C005 is a half bridge power module consisting of SiC-DMOSFETs and SiC-SBDs from ROHM. With a drain-source voltage of 1200 V and drain current of 120 A, the device has a maximum total ...
Cree’s all-silicon carbide (SiC) 1.7 kV half-bridge module has 8 mΩ on-resistance and is encased in a standard 62-mm housing. Cree’s all-silicon carbide (SiC) 1.7 kV half-bridge module has 8 mΩ ...
The MSK3003 is a 3-phase bridge MOSFET power module that employs space efficient isolated ceramic tab power SIP package. This device interfaces directly with most brushless motor drive IC’s without ...
EL SEGUNDO, Calif.--(BUSINESS WIRE)--Reducing size and cost were key concerns of Sensitron when designing their latest generation GaN power modules. By replacing traditional silicon FETs with EPC’s ...
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