What would life be like if you had access to random access memory that coupled the fast operating characteristics of DRAM with flash memory's ability to retain data while powered off? Pretty darn ...

CEA-Leti research engineers have demonstrated for the first time a scalable hafnia-zirconia-based ferroelectric capacitor platform integrated into the back-end-of-line (BEOL) at the 22 nm FD-SOI ...

Imec has used this year’s 2022 International Electron Devices Meeting (IEEE IEDM 2022), to demonstrate a lanthanum-doped hafnium-zirconate (La:HZO)-based ferroelectric capacitor. With a high endurance ...

To migrate these devices from laboratory research to large-scale industrial fabrication is still a challenge given the industry's massive investment in silicon technologies and infrastructure. Silicon ...

CEA-Leti has reported the world’s-first demonstration of 16-kbit ferroelectric random-access memory (FeRAM) arrays at the 130nm node advancing this energy-saving technology closer to commercialisation ...

To allow data storage capacity up to five times greater than the current materials used in Ferroelectric Random Access Memory (FeRAM) production, Fujitsu Microelectronics America Inc. (FMA) and the ...

The IEEE International Electron Devices Meeting (IEDM) is always a source of interesting information on the latest developments in solid-state technology and in particular solid state memory and ...

Hynix Semiconductor Inc. today claimed to be the first memory maker to develop a commercially applicable ferroelectric RAM (FeRAM). FeRAM is a non-volatile, low power, high-density and high speed ...

SAN FRANCISCO – Dec. 10, 2024 – CEA-Leti research engineers in France have demonstrated for the first time a scalable hafnia-zirconia-based ferroelectric capacitor platform integrated into the ...

Scalable Platform ‘Opens the Door for Faster, More Energy-Efficient, and Cost-Effective Memory Solutions in Embedded Systems, Such as IoT, Mobile Devices, and Edge Computing’ ' SAN FRANCISCO – Dec. 10 ...

CEA-Leti research engineers demonstrated for the first time a scalable hafnia-zirconia-based ferroelectric capacitor platform integrated into back-end-of-line (BEOL) at 22nm FD-SoI technology node.