SAN FRANCISCO — At the International Solid-State Circuits Conference (ISSCC) here, Toshiba Corp. will describe a high-density, 128-megabit ferroelectric random access memory (FeRAM or FRAM). Based on ...
The Tokyo Institute of Technology, Fujitsu Laboratories, and Fujitsu Limited have jointly developed a new material for non-volatile ferroelectric RAM (FeRAM). The material is a modified composition of ...
Resetting industry benchmarks for density and operating speed, the company’s non-volatile ferroelectric random access memory (FeRAM) prototype achieves a storage density of 128 Mb and read/write ...
CEA-Leti research engineers have demonstrated for the first time a scalable hafnia-zirconia-based ferroelectric capacitor platform integrated into the back-end-of-line (BEOL) at the 22 nm FD-SOI ...
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