The R2A25107KFP is an intelligent power device for MOSFET pre-drive featuring wide operating voltage ranges and internal oscillator typically of 265 kHz. It features on-chip 3-phase pre-driver circuit ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched “SSM10N961L,” a low on-resistance, 30V N-channel common-drain MOSFET, suitable for devices ...

MOSFETs are small but powerful components that act as ultra-fast switches in electronic circuits. In this video, you’ll learn ...

MUNICH--(BUSINESS WIRE)--onsemi (Nasdaq: ON), a leader in intelligent power and sensing technologies, today announced a series of new MOSFET devices that feature innovative top-side cooling to assist ...

Over the years, low losses possible by high breakdown field made silicon carbide (SiC) MOSFETs extremely popular amongst engineers. At present, they are mostly used in areas where IGBTs (Insulated ...

Electrical power designs are driven by market needs for increased efficiency and improved productivity while conforming to regulatory requirements. The overriding end user need is almost always for ...

Cree, Inc. releases the industry's first fully qualified SiC MOSFET power devices in "bare die" or chip form for use in power electronics modules. Cree's SiC Z-FET MOSFETs and diodes are used in ...

Vishay Intertechnology VSH launched a fourth-generation E series power MOSFET called SIHP054N65E in a bid to expand its 650V E Series family. Notably, SIHP054N65E is capable of reducing on-resistance ...

Advanced Linear Devices (ALD) has developed Supercapacitor Auto Balancing (SAB) MOSFETs that by themselves address regulation and leakage current balancing of series-connected supercaps. Without the ...