Thanks to their performance characteristics [1], [2], silicon carbide (SiC) power devices are establishing themselves on the market as valid replacements for MOSFETs and IGBTs based on silicon ...

Lexington, Mass. – STMicroelectronics' FDmesh high-volt-age n-channel power MOSFETs are a follow-on to the company's existing MDmesh MOSFET technology, adding a body diode with a short recovery time.

SEOUL, South Korea, May 2, 2023 /PRNewswire/ -- Magnachip Semiconductor Corporation (MX) announced today that the Company has released a new family of 600V Super Junction Metal Oxide Semiconductor ...

USING TRENCHFET Gen III silicon, the Si4628DY SkyFET from Vishay Intertechnology offers a maximum RDS(ON) of 3 m at a 10-V gate drive and 3.8 m at 4.5 USING TRENCHFET® Gen III silicon, the Si4628DY ...

MALVERN, Pa., Oct. 05, 2022 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new fourth-generation 600 V EF Series fast body diode MOSFET in the low profile PowerPAK® 10 ...

The L-Series 600-V HEXFET power-MOSFET family's fast-body-diode characteristics are tailored for soft switching applications such as zero-voltage-switching (ZVS) circuits. The ZVS technique maximizes ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation and Toshiba Corporation (collectively “Toshiba”) have developed an SiC metal oxide semiconductor field effect ...

αMOS5 is AOS’s latest generation of high voltage MOSFET, and has been designed to meet the high efficiency and high-density needs for Quick Charger, Adapter, PC Power, Server, Industrial Power, ...

Zetex has announced a synchronous rectifier controller for flyback converters. Combined with a discrete power Mosfet, the ZXGD3101T8 ‘zero point detector driver’ replaces Schottky and other diodes to ...