Samsung unveils 16Gb LPDDR5-Ultra-Pro DRAM at 12,700 MT/s with 4-phase self-calibration and AC-coupled transceiver equalization.
The 10th Gen V-NAND device that Samsung presented at ISSCC is a 3D TLC NAND device with over 400 active layers, a 1 Tb capacity per die, and a 5.6 GT/s interface speed. As the new ...