EDN

Gate driver for GaN transistors adds galvanic isolation

A new gate driver claims to ease the adoption of gallium nitride (GaN) technology in consumer and industrial applications such as power supplies in computer servers, factory-automation equipment, ...
Business Wire

Panasonic to Start Mass Production of High-speed Gate Driver Dedicated to GaN Power Transistor X-GaN (TM)

MUNICH, Germany--(BUSINESS WIRE)--Panasonic Corporation today announced that it will start mass production of a high-speed gate driver (AN34092B) optimized for driving its GaN power transistor X-GaN ...
Business Wire

Teledyne e2v HiRel Announces New 100 V High-Speed 20 MHz FET and GaN Transistor Driver Flip Chip Die

MILPITAS, Calif.--(BUSINESS WIRE)--Teledyne e2v HiRel announces the new TD99102 UltraCMOS ® High-speed FET and GaN transistor driver offering very high switching speed of 20 MHz. The new flip-chip ...
Electronic Design

Unique Driver Architecture Enhances GaN-Based Isolated Power-Supply Designs

GaN-on-silicon E-HEMT transistors are the choice for maximum performance, efficiency and cost-effective power supplies. Cost-effective driver technology enhances supply performance by simplifying ...
EDN

First 7-channel, NMOS low-side driver replaces Darlington transistor arrays in high-voltage systems

The TPL7407L complements TI's broad portfolio of peripheral drivers, covering a wide voltage and current range, giving designers the ability to choose a device to suit their needs without extensive ...
Electronic Design

7-Channel, NMOS Low-Side Driver Replaces Darlington Transistor Arrays

Texas Instruments (TI) introduced the industry's first seven-channel, NMOS low-side driver, replacing standard Darlington transistor arrays with a power-efficient, drop-in compatible integrated ...