Imec claims a new benchmark for mobile RF transistor performance. The approach, based on a gallium nitride (GaN) metal-oxide semiconductor high-electron-mobility transistor (MOSHEMT) on silicon (Si), ...
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Researchers achieve record-breaking RF GaN-on-Si transistor performance for high-efficiency 6G power amplifiers
Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility ...
The transition to the 2nm technology node introduces unprecedented challenges in Automated Test Equipment (ATE) bring-up and manufacturability. As semiconductor devices scale down, the complexity of ...
A team advances transistor performance through perovskite-cation incorporation. In the movie Avengers, superheroes such as Iron Man, Captain America, Hulk, and Thor each contribute their unique ...
What many engineers once saw as a flaw in organic electronics could actually make these devices more stable and reliable, according to new research. (Nanowerk News) A paper to be presented at the IEEE ...
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New nanoscale transistors use quantum tunneling to achieve high performance and efficiency
As computing demands grow, driven by artificial intelligence and the internet of things, the need for energy-efficient electronics becomes critical. At the heart of this evolution are transistors, the ...
Robot vacuums, a major household appliance that make life easier, are convenient but they often stumble on door thresholds that are not even very high. A similar threshold voltage exists in a ...
(Nanowerk Spotlight) Organic semiconductors have long held promise for enabling deformable electronic devices that can be manufactured at low cost and high volumes using printing techniques. However, ...
What many engineers once saw as a flaw in organic electronics could actually make these devices more stable and reliable, according to new research from the University of Surrey and JOANNEUM RESEARCH ...
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