DUBLIN--(BUSINESS WIRE)--Research and Markets (http://www.researchandmarkets.com/research/2113be/static_random_acce) has announced the addition of the "Static Random ...

FREMONT, Calif.--(BUSINESS WIRE)--Spin Memory, Inc., the leading MRAM developer formerly known as Spin Transfer Technologies, Inc., today announced its $52 million Series B funding round. This funding ...

In a recently published article in IEEE Electron Devices Magazine the authors, I was one of them, looked at the impact of external magnetic fields on spin tunnel torque magnetic random-access memories ...

(RTTNews) - Marvell Technology, Inc. (MRVL), a leader in data infrastructure semiconductor solutions, has launched the industry's first 2nm custom Static Random Access Memory - SRAM. This innovation ...

IBM Research has been working on new non-volatile magnetic memory for over two decades. Non-volatile memory is wonderful for retaining data without power, but it is extremely slow, and does not last ...

Researchers at Tohoku University have announced the demonstration of high-speed spin-orbit-torque (SOT) magnetoresistive random access memory cell compatible with 300 mm Si CMOS technology. The demand ...

For several decades, NAND Flash has been the primary technology for low-cost and large-density data storage applications. This non-volatile memory is present in all major electronic end-use markets, ...

SAN FRANCISCO – Dec. 10, 2024 – CEA-Leti research engineers in France have demonstrated for the first time a scalable hafnia-zirconia-based ferroelectric capacitor platform integrated into the ...