Abstract: Medium-voltage SiC MOSFETs (> 3.3 kV) feature high breakdown voltage and fast switching speed. During the turn-on transient of 10 kV SiC MOSFETs, drain-source voltage drops from 6000 V ...
Abstract: The 10 kV SiC MOSFET is a promising technology for revolutionizing medium- and high-voltage systems owing to its high blocking voltage and fast switching capability. However, existing power ...
When the Arduino UNO Q was first unveiled in October 2025, the specifications of the Qualcomm DragonWing SBC listed the ABX00162 SKU with 2GB RAM and 16GB ...
Waveshare has recently released the ESP32-P4-WIFI6-Touch-LCD, a family of tablet-like, fully enclosed HMI display development ...
We are all familiar enough by now with the succession of boards that have come from Raspberry Pi in Cambridge over the years, and when a new one comes out we’ve got a pretty good idea what ...