EDN

200-V MOSFETs cut conduction losses

Two devices have joined iDEAL Semiconductor’s SuperQ 200-V MOSFET portfolio, offering very low RDS(on) in standard power packages.
EDN

GaN fundamentals: 2DEG, crystal structure, and figure of merit

Here is why gallium nitride (GaN) is the natural successor to silicon MOSFETs in the 100–650 V class of power devices.
IEEE

SiC MOSFET Power Module with a Compact Spatially Symmetric Double-Sided Embedded Packaging Method for High-Temperature Applications up to 500°C

Abstract: The pursuit of higher temperatures, frequencies, and power densities in power converters has significantly elevated the performance demands on power modules. Existing designs struggle to ...
IEEE

A Double-Sided Cooled SiC MOSFET Power Module for EV Inverters

Abstract: Double-sided cooled (DSC) power module structures enable high power density for motor drive inverters ideal for electric vehicles (EVs). This work presents a DSC power module using ...