In this work, we present measurements of Si n-MOSFETs at temperatures ranging from 1.5 K to 300 K to and Coulomb blockade in a gate-defined Si MOS quantum dot (QD). Current-voltage (I-V) ...

Researchers demonstrate a novel method for transforming continuous time crystals into discrete ones using subharmonic injection locking, offering new insights into symmetry breaking and control in exo ...