Abstract: A low-power, X-band low-noise amplifier (LNA) is presented. Implemented with 180 GHz silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs), the circuit occupies 780times660 mum ...
Abstract: This paper presents a highly power-efficient amplifier. By stacking inverters and splitting the capacitor feedback network, the proposed amplifier achieves six-time current reuse, thereby ...
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