Featuring GaN (Gallium Nitride) technology, these chargers offer faster charging speeds, reduced heat generation, and a more ...

Solid State Physics Laboratory a DRDO laboratory has successfully developed indigenous processes for growing and manufacturing 4-inch diameter Silicon Carbide ...

wafers and fabricating Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) up to 150W. A statement from the Ministry of Defence stated that these advancements also include Monolithic ...

The Indian and Sri Lankan Coast Guards held a high-level meeting in Colombo to enhance regional maritime safety and security. This meeting focused on addressing challenges like drug trafficking and ...

The stock remained volatile throughout the year with a 22 % decline during the year. Navitas Semiconductor develops ...

Wolfspeed (NYSE:WOLF – Free Report) had its price objective cut by Susquehanna from $16.00 to $11.00 in a report issued on ...

Looking further ahead, Martinovic expects microLEDs, including those he is helping to pioneer, to penetrate the automotive industry, due to their high level of robustness. MicroLEDs may also take ...

Use precise geolocation data and actively scan device characteristics for identification. This is done to store and access ...

Basically, a liquid metal alloy called Galinstan (gallium, indium, and tin), is mixed with microscopically dispersed ...

At the heart of an InGaN LED are InGaN quantum wells, buried within a GaN p-n junction. These devices often feature an AlGaN barrier, used to prevent the overflow of electrons from the quantum well.

wafers and fabricating gallium nitride (GaN) high electron mobility transistors (HEMTs) upto 150W and Monolithic Microwave Integrated Circuits (MMICs) up to 40W for applications up to X-band ...