Abstract: The gallium-nitride (GaN) high-electron-mobility transistors (HEMT) devices have great potential for high-power, high-temperature, and high-frequency applications. However, it is challenging ...
Build a fast, private offline chatbot on Raspberry Pi 5 with the RLM AA50, 24 TOPS, and 8GB DDR4 to get instant voice replies ...
Abstract: Package degradation for high power insulated gate bipolar transistors (IGBTs) modules would seriously affect the operation safety of power electronic converters. Due to the variety of ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback